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电化学方法制备Si阵列微孔的工艺研究

薛智浩 孙友梅 # 常海龙 刘杰 侯明东 姚会军 莫丹 陈艳峰

薛智浩, 孙友梅, #, 常海龙, 刘杰, 侯明东, 姚会军, 莫丹, 陈艳峰. 电化学方法制备Si阵列微孔的工艺研究[J]. 原子核物理评论, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277
引用本文: 薛智浩, 孙友梅, #, 常海龙, 刘杰, 侯明东, 姚会军, 莫丹, 陈艳峰. 电化学方法制备Si阵列微孔的工艺研究[J]. 原子核物理评论, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277
XUE Zhi-hao, SUN You-mei, #, CHANG Hai-long, LIU Jie, HOU Ming-dong, YAO Hui-jun, MO Dan, CHEN Yan-feng. Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching[J]. Nuclear Physics Review, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277
Citation: XUE Zhi-hao, SUN You-mei, #, CHANG Hai-long, LIU Jie, HOU Ming-dong, YAO Hui-jun, MO Dan, CHEN Yan-feng. Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching[J]. Nuclear Physics Review, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277

电化学方法制备Si阵列微孔的工艺研究

doi: 10.11804/NuclPhysRev.25.03.277
详细信息
    通讯作者: 孙友梅

Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching

  • 摘要: 对用电化学方法制备Si大孔阵列管坑工艺进行了初步探索。 通过对Si在KOH溶液中各向异性湿法蚀刻和在HF酸溶液中的电化学蚀刻过程中各种参数的摸索, 确定在室温下制备大孔阵列的最佳配比浓度, 蚀刻出符合要求的管坑阵列, 为进一步制备结构化闪烁屏奠定了实验基础。 The 3D structures in silicon are increasingly coming to use in many fields. For example, the high resolution Xray digital imaging detector can be made by coupling CCD and the scintillating screen which is made by the array trenches filled with CsI(Tl). In the present work, we explored the technology of etching microarray on the ntype silicon with high resistance. By studying the relative parameters of anisotropic etching of KOH and electrochemical etching of HF, the optimized concentration of HF was determined and the micropore array trenches with 200 μm in depth were realized. The results establish an experimental base for further fabrication of the scintillating screen.
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出版历程
  • 收稿日期:  1900-01-01
  • 修回日期:  1900-01-01
  • 刊出日期:  2008-09-20

电化学方法制备Si阵列微孔的工艺研究

doi: 10.11804/NuclPhysRev.25.03.277
    通讯作者: 孙友梅

摘要: 对用电化学方法制备Si大孔阵列管坑工艺进行了初步探索。 通过对Si在KOH溶液中各向异性湿法蚀刻和在HF酸溶液中的电化学蚀刻过程中各种参数的摸索, 确定在室温下制备大孔阵列的最佳配比浓度, 蚀刻出符合要求的管坑阵列, 为进一步制备结构化闪烁屏奠定了实验基础。 The 3D structures in silicon are increasingly coming to use in many fields. For example, the high resolution Xray digital imaging detector can be made by coupling CCD and the scintillating screen which is made by the array trenches filled with CsI(Tl). In the present work, we explored the technology of etching microarray on the ntype silicon with high resistance. By studying the relative parameters of anisotropic etching of KOH and electrochemical etching of HF, the optimized concentration of HF was determined and the micropore array trenches with 200 μm in depth were realized. The results establish an experimental base for further fabrication of the scintillating screen.

English Abstract

薛智浩, 孙友梅, #, 常海龙, 刘杰, 侯明东, 姚会军, 莫丹, 陈艳峰. 电化学方法制备Si阵列微孔的工艺研究[J]. 原子核物理评论, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277
引用本文: 薛智浩, 孙友梅, #, 常海龙, 刘杰, 侯明东, 姚会军, 莫丹, 陈艳峰. 电化学方法制备Si阵列微孔的工艺研究[J]. 原子核物理评论, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277
XUE Zhi-hao, SUN You-mei, #, CHANG Hai-long, LIU Jie, HOU Ming-dong, YAO Hui-jun, MO Dan, CHEN Yan-feng. Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching[J]. Nuclear Physics Review, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277
Citation: XUE Zhi-hao, SUN You-mei, #, CHANG Hai-long, LIU Jie, HOU Ming-dong, YAO Hui-jun, MO Dan, CHEN Yan-feng. Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching[J]. Nuclear Physics Review, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277

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