关键词: 
单晶硅 /
氦离子注入 /
纳米气泡 /
生长机制 /
缺陷分析

摘要: 首先简述了He离子注入单晶Si引起的气泡形成、生长以及其它缺陷对其生长的影响，介绍了Si中He气泡生长的可能微观机制以及它们在现代半导体技术中潜在的应用前景，提出了该领域研究有待解决的关键问题.He ion implantation induced bubbles or cavities in silicon have been paid more and more attentions due to their potential applications in modern semiconductor technology. In this paper, He ion implantation induced formation and growth of bubbles in silicon together with their interactions with other defects were first briefly reviewed. Then the possible growth mechanisms of He bubbles in silicon and their potential applications in modern semiconductor technology were described. Finally, we presented the ke...