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S钝化GaAs(100)表面的电子特性

马丽 危书义 汪建广

马丽, 危书义, 汪建广. S钝化GaAs(100)表面的电子特性[J]. 原子核物理评论, 2002, 19(Suppl): 102-105. doi: 10.11804/NuclPhysRev.19.S1.102
引用本文: 马丽, 危书义, 汪建广. S钝化GaAs(100)表面的电子特性[J]. 原子核物理评论, 2002, 19(Suppl): 102-105. doi: 10.11804/NuclPhysRev.19.S1.102
MA Li, WEI Shu-yi, WANG Jian-guang. Electronic Structure of Sulfur Passivation GaAs(100) Surface[J]. Nuclear Physics Review, 2002, 19(Suppl): 102-105. doi: 10.11804/NuclPhysRev.19.S1.102
Citation: MA Li, WEI Shu-yi, WANG Jian-guang. Electronic Structure of Sulfur Passivation GaAs(100) Surface[J]. Nuclear Physics Review, 2002, 19(Suppl): 102-105. doi: 10.11804/NuclPhysRev.19.S1.102

S钝化GaAs(100)表面的电子特性

doi: 10.11804/NuclPhysRev.19.S1.102

Electronic Structure of Sulfur Passivation GaAs(100) Surface

  • 摘要: 用TB LMTO方法研究单层的S原子在理想的GaAs(1 0 0 )表面的化学吸附 ,对GaAs(1 0 0 )表面是Ga 和As 中断两种情况分别进行考虑 .计算了S原子在不同位置的吸附能、吸附体系与清洁的GaAs(1 0 0 )表面的层投影态密度 ,以及电子转移情况 .结果表明 ,两种情况下S原子都是桥位吸附最稳定 ,S Ga相互作用比S As稍强 ,S钝化GaAs(1 0 0 )表面可以取得明显的钝化效果. The adsorption of one monolayer S atoms on an ideal GaAs(10 0) surface is studied by using the self-consistent tight-binding linear muffin- tin orbital method. The S atoms chemisorption on Ga-terminated and As-terminat ed surface are considered respectively. Adsorption energies of a S atom on diffe rent sites are calculated. The layer projected density of states for S atoms cov ered GaAs(100) surface is studied and compared with that of the clean surface. T he charge transfer is investigated. It is...
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出版历程
  • 收稿日期:  1900-01-01
  • 修回日期:  1900-01-01
  • 刊出日期:  2002-07-20

S钝化GaAs(100)表面的电子特性

doi: 10.11804/NuclPhysRev.19.S1.102

摘要: 用TB LMTO方法研究单层的S原子在理想的GaAs(1 0 0 )表面的化学吸附 ,对GaAs(1 0 0 )表面是Ga 和As 中断两种情况分别进行考虑 .计算了S原子在不同位置的吸附能、吸附体系与清洁的GaAs(1 0 0 )表面的层投影态密度 ,以及电子转移情况 .结果表明 ,两种情况下S原子都是桥位吸附最稳定 ,S Ga相互作用比S As稍强 ,S钝化GaAs(1 0 0 )表面可以取得明显的钝化效果. The adsorption of one monolayer S atoms on an ideal GaAs(10 0) surface is studied by using the self-consistent tight-binding linear muffin- tin orbital method. The S atoms chemisorption on Ga-terminated and As-terminat ed surface are considered respectively. Adsorption energies of a S atom on diffe rent sites are calculated. The layer projected density of states for S atoms cov ered GaAs(100) surface is studied and compared with that of the clean surface. T he charge transfer is investigated. It is...

English Abstract

马丽, 危书义, 汪建广. S钝化GaAs(100)表面的电子特性[J]. 原子核物理评论, 2002, 19(Suppl): 102-105. doi: 10.11804/NuclPhysRev.19.S1.102
引用本文: 马丽, 危书义, 汪建广. S钝化GaAs(100)表面的电子特性[J]. 原子核物理评论, 2002, 19(Suppl): 102-105. doi: 10.11804/NuclPhysRev.19.S1.102
MA Li, WEI Shu-yi, WANG Jian-guang. Electronic Structure of Sulfur Passivation GaAs(100) Surface[J]. Nuclear Physics Review, 2002, 19(Suppl): 102-105. doi: 10.11804/NuclPhysRev.19.S1.102
Citation: MA Li, WEI Shu-yi, WANG Jian-guang. Electronic Structure of Sulfur Passivation GaAs(100) Surface[J]. Nuclear Physics Review, 2002, 19(Suppl): 102-105. doi: 10.11804/NuclPhysRev.19.S1.102

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