Implantation Study of Silicon Cluster Ions Sin+(n=1-3)Into Si Crystal
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摘要: 利用硅团簇Si+ n(n=1— 3 )注入Si单晶 ,在Si单晶内形成一些单空位和双空位 ,通过其光吸收谱观察到了带电状态为V02 的双空位缺陷 ,以及团簇效应对缺陷的影响 ,正电子湮灭及TRIM程序模拟计算都表明团簇效应的存在.In the case of Si + n (n=1-3) with energy of 0. 6 MeV/ion implantation into Si crystal, the mono-and bi-vacancies are formed i n the crystal. The optical absorption indicated that the defects, V 20 stat e, caused by cluster ions variy with the size of cluster. That is "Cluster Effe ct". Cluster zone and effect can be deduced by TRIM program and the experiment of positive electron annihilation.Abstract: In the case of Si + n (n=1-3) with energy of 0. 6 MeV/ion implantation into Si crystal, the mono-and bi-vacancies are formed i n the crystal. The optical absorption indicated that the defects, V 20 stat e, caused by cluster ions variy with the size of cluster. That is "Cluster Effe ct". Cluster zone and effect can be deduced by TRIM program and the experiment of positive electron annihilation.
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Key words:
- cluster ion /
- optical absorption /
- cluster zone
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