离子注入制备量子光电材料的研究

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离子注入制备量子光电材料的研究

谢二庆, 王志光, 金运范

文章导航 > 原子核物理评论 > 1998 > 15(3): 166-169

谢二庆, 王志光, 金运范. 离子注入制备量子光电材料的研究[J]. 原子核物理评论, 1998, 15(3): 166-169. doi: 10.11804/NuclPhysRev.15.03.166

引用本文:

谢二庆, 王志光, 金运范. 离子注入制备量子光电材料的研究[J]. 原子核物理评论, 1998, 15(3): 166-169. doi: 10.11804/NuclPhysRev.15.03.166

Xie Er-qing, Wang Zhi-guang, Jin Yunfan. Study of Quantum Optoelectronic Material Prepared by Ion Implantation[J]. Nuclear Physics Review, 1998, 15(3): 166-169. doi: 10.11804/NuclPhysRev.15.03.166

Citation:

Xie Er-qing, Wang Zhi-guang, Jin Yunfan. Study of Quantum Optoelectronic Material Prepared by Ion Implantation[J]. Nuclear Physics Review, 1998, 15(3): 166-169. doi: 10.11804/NuclPhysRev.15.03.166

离子注入制备量子光电材料的研究

doi: 10.11804/NuclPhysRev.15.03.166

1中国科学院近代物理研究所;2 兰州大学物理系

Study of Quantum Optoelectronic Material Prepared by Ion Implantation

1 Institute of Modern Physics; the Chinese Academy of Sciences; Lanzhou 730000 2 Department of Physics; Lanzhou University; Lanzhou 730000

摘要: 对由量子限域效应引起的硅纳米晶粒的强烈光致发光现象、离子注入技术制备量子光电材料及其在光电子器件应用领域的优势和前景作了评述和探讨．The strong photoluminescence (PL) of Si nanocrystals origined from the quantum confined effect, the preparation of quantum optoelectronic material by ion implantation as well as the advantages if its application to optoelectronic devices are reviewed and discussed.
- 离子注入 /
- 硅纳米晶粒 /
- 量子点材料
Abstract: The strong photoluminescence (PL) of Si nanocrystals origined from the quantum confined effect, the preparation of quantum optoelectronic material by ion implantation as well as the advantages if its application to optoelectronic devices are reviewed and discussed.
- ion implantation /
- Si nanocrystals /
- quantum dot film

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离子注入制备量子光电材料的研究

doi: 10.11804/NuclPhysRev.15.03.166

1中国科学院近代物理研究所;2 兰州大学物理系

收稿日期: 1900-01-01
修回日期: 1900-01-01
刊出日期: 1998-09-20

关键词:

硅纳米晶粒 /

量子点材料

摘要: 对由量子限域效应引起的硅纳米晶粒的强烈光致发光现象、离子注入技术制备量子光电材料及其在光电子器件应用领域的优势和前景作了评述和探讨．The strong photoluminescence (PL) of Si nanocrystals origined from the quantum confined effect, the preparation of quantum optoelectronic material by ion implantation as well as the advantages if its application to optoelectronic devices are reviewed and discussed.

English Abstract

谢二庆, 王志光, 金运范. 离子注入制备量子光电材料的研究[J]. 原子核物理评论, 1998, 15(3): 166-169. doi: 10.11804/NuclPhysRev.15.03.166

引用本文:

谢二庆, 王志光, 金运范. 离子注入制备量子光电材料的研究[J]. 原子核物理评论, 1998, 15(3): 166-169. doi: 10.11804/NuclPhysRev.15.03.166

Xie Er-qing, Wang Zhi-guang, Jin Yunfan. Study of Quantum Optoelectronic Material Prepared by Ion Implantation[J]. Nuclear Physics Review, 1998, 15(3): 166-169. doi: 10.11804/NuclPhysRev.15.03.166

Citation:

Xie Er-qing, Wang Zhi-guang, Jin Yunfan. Study of Quantum Optoelectronic Material Prepared by Ion Implantation[J]. Nuclear Physics Review, 1998, 15(3): 166-169. doi: 10.11804/NuclPhysRev.15.03.166

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