III-V族化合物半导体材料的高能重离子辐照效应

陈志权; 李世清; 王柱; 胡新文; 王少阶; 侯明东

doi:10.11804/NuclPhysRev.15.03.161

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III-V族化合物半导体材料的高能重离子辐照效应

陈志权, 李世清, 王柱, 胡新文, 王少阶, 侯明东

文章导航 > 原子核物理评论 > 1998 > 15(3): 161-165

陈志权, 李世清, 王柱, 胡新文, 王少阶, 侯明东. III-V族化合物半导体材料的高能重离子辐照效应[J]. 原子核物理评论, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161

引用本文:

Chen Zhi-quan, Li Shi-qing, Wang Zhu, Hu Xin-wen, Wang Shao-jie, Hou Ming-dong. High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors[J]. Nuclear Physics Review, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161

Citation:

Chen Zhi-quan, Li Shi-qing, Wang Zhu, Hu Xin-wen, Wang Shao-jie, Hou Ming-dong. High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors[J]. Nuclear Physics Review, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161

III-V族化合物半导体材料的高能重离子辐照效应

doi: 10.11804/NuclPhysRev.15.03.161

1武汉大学物理系; 2中国科学院近代物理研究所

High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors

1 Department of Physics; Wuhan University; Wuhan 4300722 Institute of Modern Physics; the Chinese Academy of Science; Lanzhou 730000

摘要: 用高能（５００ＭｅＶ）Ｎｅ离子束对ＧａＡｓ和ＩｎＰ进行了辐照，用ＭｏｎｔｅＣａｒｌｏ模拟、正电子湮没谱学以及红外光谱研究了辐照产生的缺陷特性．结果表明，在未辐照的样品中存在单空位，经辐照后，可在样品中产生单空位；当剂量较大时，还会形成双空位甚至尺寸较大的空洞．红外光谱测量发现，在辐照后的ＧａＡｓ样品中有非晶区形成．此外，辐照在样品中还产生了反位缺陷ＧａＡｓ和ＩｎＰ以及受主杂质ＺｎＩｎ．对经１０１４ｉｏｎｓ／ｃｍ２剂量辐照的ＩｎＰ进行了光学实验，在辐照后的ＩｎＰ材料中发现了亚稳态中心． Both GaAs and InP were irradiated by high energy (500 MeV) Ne ions. The Monte Carlo simulation, positron annihilation and IR spectroscopy were used to study the radiation induced defects. The result showed that monovacancies existed in as grown samples, but more monovacancies were introduced, after Ne ions irradiation, and with increasing radiation dose, divacancies were formed, and eventually large voids were observed. The IR measurement for irradiated GaAs samples confirmed the...
- 正电子湮没 /
- 辐照效应 /
- 亚稳态中心
Abstract: Both GaAs and InP were irradiated by high energy (500 MeV) Ne ions. The Monte Carlo simulation, positron annihilation and IR spectroscopy were used to study the radiation induced defects. The result showed that monovacancies existed in as grown samples, but more monovacancies were introduced, after Ne ions irradiation, and with increasing radiation dose, divacancies were formed, and eventually large voids were observed. The IR measurement for irradiated GaAs samples confirmed the...
- positron annihilation /
- radiation effect /
- metastable center

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III-V族化合物半导体材料的高能重离子辐照效应

doi: 10.11804/NuclPhysRev.15.03.161

1武汉大学物理系; 2中国科学院近代物理研究所

收稿日期: 1900-01-01
修回日期: 1900-01-01
刊出日期: 1998-09-20

关键词:

正电子湮没 /

辐照效应 /

亚稳态中心

摘要: 用高能（５００ＭｅＶ）Ｎｅ离子束对ＧａＡｓ和ＩｎＰ进行了辐照，用ＭｏｎｔｅＣａｒｌｏ模拟、正电子湮没谱学以及红外光谱研究了辐照产生的缺陷特性．结果表明，在未辐照的样品中存在单空位，经辐照后，可在样品中产生单空位；当剂量较大时，还会形成双空位甚至尺寸较大的空洞．红外光谱测量发现，在辐照后的ＧａＡｓ样品中有非晶区形成．此外，辐照在样品中还产生了反位缺陷ＧａＡｓ和ＩｎＰ以及受主杂质ＺｎＩｎ．对经１０１４ｉｏｎｓ／ｃｍ２剂量辐照的ＩｎＰ进行了光学实验，在辐照后的ＩｎＰ材料中发现了亚稳态中心． Both GaAs and InP were irradiated by high energy (500 MeV) Ne ions. The Monte Carlo simulation, positron annihilation and IR spectroscopy were used to study the radiation induced defects. The result showed that monovacancies existed in as grown samples, but more monovacancies were introduced, after Ne ions irradiation, and with increasing radiation dose, divacancies were formed, and eventually large voids were observed. The IR measurement for irradiated GaAs samples confirmed the...