Heavy Ion Induced Single Event Upset and Its Accelerator Simulation Investigation
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摘要: 描述了宇航半导体器件的单粒子效应的危害和研究方法,并介绍了用重离于加速器进行地面模拟研究的概况.The harm and investigation means of single event upset in spacecraft electronics are described and a survey of simulation test by using heavy ion accelerator is also given in this paper.Abstract: The harm and investigation means of single event upset in spacecraft electronics are described and a survey of simulation test by using heavy ion accelerator is also given in this paper.
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Key words:
- single event upset /
- semiconductor device /
- heavy ion application
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