Development of Superthin Epitaxial Silicon Detectors
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摘要: 本文介绍了厚度为5.2、6、7和10μm,有效面积为28~154mm2的超薄型外延硅dE/dX探测器(对于8.78MeVa粒子的能损ΔK的分辨为48~76keV)及其研制工艺、主要用途、测试结果及在核物理实验中的应用. The epitaxial st-dE/dX surface barrier detectors with an active area of 28~154mm2 and thickness of 5. 2~10μm have been developed. This kind of detector can be used for measuring α-particle, proton with low energy and for distinguishing particles...Abstract: The epitaxial st-dE/dX surface barrier detectors with an active area of 28~154mm2 and thickness of 5. 2~10μm have been developed. This kind of detector can be used for measuring α-particle, proton with low energy and for distinguishing particles...
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Key words:
- epitaxial silicon /
- oxidize /
- energy resolution
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