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单根Cu纳米线的制备与原位电学性质

徐国恒 段敬来 王文丹 刘杰

徐国恒, 段敬来, 王文丹, 刘杰. 单根Cu纳米线的制备与原位电学性质[J]. 原子核物理评论, 2019, 36(1): 91-95. doi: 10.11804/NuclPhysRev.36.01.091
引用本文: 徐国恒, 段敬来, 王文丹, 刘杰. 单根Cu纳米线的制备与原位电学性质[J]. 原子核物理评论, 2019, 36(1): 91-95. doi: 10.11804/NuclPhysRev.36.01.091
XU Guoheng, DUAN Jinglai, WANG Wendan, LIU Jie. Preparation of Single Cu Nanowire and in-situ Study of Its Electrical Properties[J]. Nuclear Physics Review, 2019, 36(1): 91-95. doi: 10.11804/NuclPhysRev.36.01.091
Citation: XU Guoheng, DUAN Jinglai, WANG Wendan, LIU Jie. Preparation of Single Cu Nanowire and in-situ Study of Its Electrical Properties[J]. Nuclear Physics Review, 2019, 36(1): 91-95. doi: 10.11804/NuclPhysRev.36.01.091

单根Cu纳米线的制备与原位电学性质

doi: 10.11804/NuclPhysRev.36.01.091
基金项目: 中国科学院前沿科学重点研究计划项目(QYZDB-SSW-SLH010);国家自然科学基金资助项目(11675233,51402245)
详细信息
    作者简介:

    徐国恒(1990-),男,甘肃武威人,硕士研究生,从事金属纳米结构的制备及性质表征研究;E-mail:guohengxu@my.swjtu.edu.cn

    通讯作者: 王文丹,E-mail:wendanwang@yahoo.com;刘杰,E-mail:j.liu@impcas.ac.cn
  • 中图分类号: O571.53

Preparation of Single Cu Nanowire and in-situ Study of Its Electrical Properties

Funds: Key Research Program of Frontier Sciences, CAS (QYZDB-SSW-SLH010); National Natural Science Foundation of China (11675233, 51402245)
  • 摘要: 金属纳米线是未来纳米电子器件中的重要组成部分,因此研究单根金属纳米线的电学性质具有重要的意义。相对于单根纳米线电学性质的移位测量,原位测量精确度更高,结果更可靠。目前,国际上用于原位电学性质测量的单根纳米线的最小直径为80 nm,更小直径的纳米线很难在纳米孔道中生长,其电化学生长动力学过程还不清楚,电阻率数据缺失。本文在单个蚀刻离子径迹孔道中利用电化学沉积技术成功生长了单根Cu纳米线,其直径仅为64 nm,为目前同方法最细。在此基础上,首次测量了该纳米线的电输运性质并获得了其电阻率数值。研究结果表明,利用电导法可以监测模板中单个孔道的形成和扩孔的动力学过程以及最终的孔径大小。电化学沉积时,沉积电流与沉积时间曲线清晰地揭示了纳米线的沉积动力学过程。I-V曲线研究显示Cu纳米线具有典型的金属特性。其电阻率为3.46 μΩ·cm,约是Cu块体材料电阻率的两倍。电阻率增大可能与电子在晶界和表面处的散射有关。


    Metal nanowires, as one of the most crucial components of nanoelectronic devices in the future, have attracted enormous attention. Therefore, it is of great significance to investigate the electrical properties of single metal nanowires. Herein, the single Cu nanowire with diameter of 64 nm was successfully prepared by using single-ion track template method combined with electrochemical deposition approach, and its I-V curve was measured. Such a diameter represents the thinnest one as comparing the reported ones obtained by the same method. The results illustrated that the process of formation and growth, as well as the final diameter of single nanochannel in template can be monitored and measured by conductance method. During the electrochemical deposition, the dynamic evolution of the deposition of nanowire can be clearly reflected through the deposition current and deposition time. At the same time, I-V measurements reveal that the Cu nanowire has typical metallic characteristic. For the first time, the resistivity of such a thin nanowire is obtained and its resistivity is 3.46 μΩ·cm which is around twice that of Cu bulk materials. The increase of resistivity is believed coming from finite size effects and may be related to the electrons scattering at the grain boundaries and surfaces.
  • [1] XIA Y, YANG P, SUN Y, et al. Advanced Materials, 2003, 15(5):353.
    [2] ZHANG J, ZHANG L, YE C, et al. Chemical Physics Letter, 2004, 400(1-3):158.
    [3] LIU J, DUAN J L, TOIMIL-MOLARES M E, et al. Nanotechnology, 2006, 17(8):1922.
    [4] TOIMIL-MOLARES M E. Beilstein Journal of Nanotechnology, 2012, 3:860.
    [5] TOIMIL-MOLARES M E, BROZT J, BUSCHMANN V, et al. Nucl Instr and Meth B, 2001, 185(1-4):192.
    [6] TOIMIL-MOLARES M E, HOHBERGER E M, SCHEAFLEIN C, et al. Applied Physics Letter, 2003, 82(13):2139.
    [7] CHOI H, PARK S H. Journal of American Chemical Society, 2004, 126(20):6248.
    [8] LIU Z, BANDO Y. Advanced Materials, 2003, 15(4):303.
    [9] LIU Z, YANG Y, LIANG J, et al. Journal of Physical Chemistry B, 2003, 107(46):12658.
    [10] HUANG Y, DUAN X, WEI Q, et al. Science, 2001, 291(5504):630.
    [11] VALIZADEH S, ABID M, HERNANDEZ-RAMIRREZ F, et al. Nanotechnology, 2006, 17(4):1134.
    [12] CAO H, WANG L, QIU Y, et al. Nanotechnology, 2006, 17(6):1736.
    [13] OON C H, THONG J T L. Nanotechnology, 2004, 15(5):687.
    [14] DUAN J L, LIU J, ZHU Z Y, et al. Nuclear Techniques, 2005, 28(9):684. (in Chinese) (段敬来, 刘杰, 朱智勇, 等. 核技术, 2005, 28(9):684.)
    [15] ZHU Z Y, DUAN J L, MAEKAWA Y, et al. Radiation Measurements, 2004, 38(3):255.
    [16] CHTANKO N, TOIMIL-MOLARES M E, CORENLIUS T, et al. Journal of Physical Chemistry B, 2004, 108(28):9950.
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出版历程
  • 收稿日期:  2019-01-20
  • 修回日期:  2019-02-20
  • 刊出日期:  2019-03-20

单根Cu纳米线的制备与原位电学性质

doi: 10.11804/NuclPhysRev.36.01.091
    基金项目:  中国科学院前沿科学重点研究计划项目(QYZDB-SSW-SLH010);国家自然科学基金资助项目(11675233,51402245)
    作者简介:

    徐国恒(1990-),男,甘肃武威人,硕士研究生,从事金属纳米结构的制备及性质表征研究;E-mail:guohengxu@my.swjtu.edu.cn

    通讯作者: 王文丹,E-mail:wendanwang@yahoo.com;刘杰,E-mail:j.liu@impcas.ac.cn
  • 中图分类号: O571.53

摘要: 金属纳米线是未来纳米电子器件中的重要组成部分,因此研究单根金属纳米线的电学性质具有重要的意义。相对于单根纳米线电学性质的移位测量,原位测量精确度更高,结果更可靠。目前,国际上用于原位电学性质测量的单根纳米线的最小直径为80 nm,更小直径的纳米线很难在纳米孔道中生长,其电化学生长动力学过程还不清楚,电阻率数据缺失。本文在单个蚀刻离子径迹孔道中利用电化学沉积技术成功生长了单根Cu纳米线,其直径仅为64 nm,为目前同方法最细。在此基础上,首次测量了该纳米线的电输运性质并获得了其电阻率数值。研究结果表明,利用电导法可以监测模板中单个孔道的形成和扩孔的动力学过程以及最终的孔径大小。电化学沉积时,沉积电流与沉积时间曲线清晰地揭示了纳米线的沉积动力学过程。I-V曲线研究显示Cu纳米线具有典型的金属特性。其电阻率为3.46 μΩ·cm,约是Cu块体材料电阻率的两倍。电阻率增大可能与电子在晶界和表面处的散射有关。


Metal nanowires, as one of the most crucial components of nanoelectronic devices in the future, have attracted enormous attention. Therefore, it is of great significance to investigate the electrical properties of single metal nanowires. Herein, the single Cu nanowire with diameter of 64 nm was successfully prepared by using single-ion track template method combined with electrochemical deposition approach, and its I-V curve was measured. Such a diameter represents the thinnest one as comparing the reported ones obtained by the same method. The results illustrated that the process of formation and growth, as well as the final diameter of single nanochannel in template can be monitored and measured by conductance method. During the electrochemical deposition, the dynamic evolution of the deposition of nanowire can be clearly reflected through the deposition current and deposition time. At the same time, I-V measurements reveal that the Cu nanowire has typical metallic characteristic. For the first time, the resistivity of such a thin nanowire is obtained and its resistivity is 3.46 μΩ·cm which is around twice that of Cu bulk materials. The increase of resistivity is believed coming from finite size effects and may be related to the electrons scattering at the grain boundaries and surfaces.

English Abstract

徐国恒, 段敬来, 王文丹, 刘杰. 单根Cu纳米线的制备与原位电学性质[J]. 原子核物理评论, 2019, 36(1): 91-95. doi: 10.11804/NuclPhysRev.36.01.091
引用本文: 徐国恒, 段敬来, 王文丹, 刘杰. 单根Cu纳米线的制备与原位电学性质[J]. 原子核物理评论, 2019, 36(1): 91-95. doi: 10.11804/NuclPhysRev.36.01.091
XU Guoheng, DUAN Jinglai, WANG Wendan, LIU Jie. Preparation of Single Cu Nanowire and in-situ Study of Its Electrical Properties[J]. Nuclear Physics Review, 2019, 36(1): 91-95. doi: 10.11804/NuclPhysRev.36.01.091
Citation: XU Guoheng, DUAN Jinglai, WANG Wendan, LIU Jie. Preparation of Single Cu Nanowire and in-situ Study of Its Electrical Properties[J]. Nuclear Physics Review, 2019, 36(1): 91-95. doi: 10.11804/NuclPhysRev.36.01.091
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