B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

张蓓; 张鹏; 王军; 朱飞; 曹兴忠; 王宝义; 刘昌龙

doi:10.11804/NuclPhysRev.30.04.471

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B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

张蓓, 张鹏, 王军, 朱飞, 曹兴忠, 王宝义, 刘昌龙

文章导航 > 原子核物理评论 > 2013 > 30(4): 471-476

张蓓, 张鹏, 王军, 朱飞, 曹兴忠, 王宝义, 刘昌龙. B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)[J]. 原子核物理评论, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471

引用本文:

ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471

Citation:

ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471

B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

doi: 10.11804/NuclPhysRev.30.04.471

天津大学理学院物理系,天津300072;
中国科学院高能物理研究所核分析技术重点实验室,北京100049;
天津市低维功能材料物理与制备技术重点实验室,天津300072

Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions

School of Science, Tianjin University, Tianjin 300072, China;
Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics,Chinese Academy of Sciences, Beijing 100049, China;

摘要: 室温下将130 keV，5x10¹⁴ cm^-2B离子和55 keV，1x10¹⁶ cm^-2H离子单独或顺次注入到单晶Si中，采用横截面试样透射电子显微镜(XTEM)和慢正电子湮没技术(SPAT) 研究了离子注入引起的微观缺陷的产生及其热演变。XTEM观测结果显示，B 和H 离子顺次注入到单晶Si 可有效减少(111) 取向的H板层缺陷，并促进了(100) 取向的H板层缺陷的择优生长。SPAT 观测结果显示，在顺次注入的样品中，B 离子平均射程处保留了大量的空位型缺陷。以上结果表明，B离子本身及B 离子注入所产生的空位型缺陷对板层缺陷的生长起到了促进作用。Abstract：Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5x10¹⁴ cm^-2 and 55 keV H ions at a fluence of 1x10¹⁶ cm^-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPAT
measurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicat e that the promotion effect should
be attributed to the role of both B and B implanted induced vacancy-type defects.
- 单晶Si /
- B 和H离子注入 /
- H板层缺陷 /
- XTEM /
- SPAT
Abstract: Abstract：Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5x10¹⁴ cm^-2 and 55 keV H ions at a fluence of 1x10¹⁶ cm^-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPAT
measurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicat e that the promotion effect should
be attributed to the role of both B and B implanted induced vacancy-type defects.
- crystalline Si /
- B and/or H ion implantation /
- H platelets /
- XTEM /
- SPAT

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B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

doi: 10.11804/NuclPhysRev.30.04.471

天津大学理学院物理系,天津300072;

中国科学院高能物理研究所核分析技术重点实验室,北京100049;

天津市低维功能材料物理与制备技术重点实验室,天津300072

收稿日期: 1900-01-01
修回日期: 1900-01-01
刊出日期: 2013-12-20

关键词:

单晶Si /

B 和H离子注入 /

H板层缺陷 /

XTEM /

SPAT

摘要: 室温下将130 keV，5x10¹⁴ cm^-2B离子和55 keV，1x10¹⁶ cm^-2H离子单独或顺次注入到单晶Si中，采用横截面试样透射电子显微镜(XTEM)和慢正电子湮没技术(SPAT) 研究了离子注入引起的微观缺陷的产生及其热演变。XTEM观测结果显示，B 和H 离子顺次注入到单晶Si 可有效减少(111) 取向的H板层缺陷，并促进了(100) 取向的H板层缺陷的择优生长。SPAT 观测结果显示，在顺次注入的样品中，B 离子平均射程处保留了大量的空位型缺陷。以上结果表明，B离子本身及B 离子注入所产生的空位型缺陷对板层缺陷的生长起到了促进作用。Abstract：Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5x10¹⁴ cm^-2 and 55 keV H ions at a fluence of 1x10¹⁶ cm^-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPAT
measurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicat e that the promotion effect should
be attributed to the role of both B and B implanted induced vacancy-type defects.

English Abstract

引用本文:

Citation:

ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471

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B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

doi: 10.11804/NuclPhysRev.30.04.471

Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions

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B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

doi: 10.11804/NuclPhysRev.30.04.471

天津大学理学院物理系,天津300072;

中国科学院高能物理研究所核分析技术重点实验室,北京100049;

天津市低维功能材料物理与制备技术重点实验室,天津300072

English Abstract

Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions

School of Science, Tianjin University, Tianjin 300072, China;

Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics,Chinese Academy of Sciences, Beijing 100049, China;

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B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

doi: 10.11804/NuclPhysRev.30.04.471

Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions

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B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

doi: 10.11804/NuclPhysRev.30.04.471

天津大学理学院物理系,天津300072; 中国科学院高能物理研究所核分析技术重点实验室,北京100049; 天津市低维功能材料物理与制备技术重点实验室,天津300072

English Abstract

Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions

School of Science, Tianjin University, Tianjin 300072, China; Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics,Chinese Academy of Sciences, Beijing 100049, China;

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目录

天津大学理学院物理系,天津300072;

中国科学院高能物理研究所核分析技术重点实验室,北京100049;

天津市低维功能材料物理与制备技术重点实验室,天津300072

School of Science, Tianjin University, Tianjin 300072, China;

Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics,Chinese Academy of Sciences, Beijing 100049, China;