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B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

张蓓 张鹏 王军 朱飞 曹兴忠 王宝义 刘昌龙

张蓓, 张鹏, 王军, 朱飞, 曹兴忠, 王宝义, 刘昌龙. B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)[J]. 原子核物理评论, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471
引用本文: 张蓓, 张鹏, 王军, 朱飞, 曹兴忠, 王宝义, 刘昌龙. B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)[J]. 原子核物理评论, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471
ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471
Citation: ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471

B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

doi: 10.11804/NuclPhysRev.30.04.471

Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions

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出版历程
  • 收稿日期:  1900-01-01
  • 修回日期:  1900-01-01
  • 刊出日期:  2013-12-20

B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

doi: 10.11804/NuclPhysRev.30.04.471

摘要: 室温下将130 keV,5x1014 cm-2 B离子和55 keV,1x1016 cm-2 H离子单独或顺次注入到单晶Si中,采用横截面试样透射电子显微镜(XTEM)和慢正电子湮没技术(SPAT) 研究了离子注入引起的微观缺陷的产生及其热演变。XTEM观测结果显示,B 和H 离子顺次注入到单晶Si 可有效减少(111) 取向的H板层缺陷,并促进了(100) 取向的H板层缺陷的择优生长。SPAT 观测结果显示,在顺次注入的样品中,B 离子平均射程处保留了大量的空位型缺陷。以上结果表明,B离子本身及B 离子注入所产生的空位型缺陷对板层缺陷的生长起到了促进作用。Abstract:Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5x1014 cm-2 and 55 keV H ions at a fluence of 1x1016 cm-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPAT
measurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicat e that the promotion effect should
be attributed to the role of both B and B implanted induced vacancy-type defects.

English Abstract

张蓓, 张鹏, 王军, 朱飞, 曹兴忠, 王宝义, 刘昌龙. B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)[J]. 原子核物理评论, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471
引用本文: 张蓓, 张鹏, 王军, 朱飞, 曹兴忠, 王宝义, 刘昌龙. B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)[J]. 原子核物理评论, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471
ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471
Citation: ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471

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