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铅离子辐照注碳4H—SiC的红外光谱特性研究

周丽宏 张崇宏 宋银 杨义涛

周丽宏, 张崇宏, 宋银, 杨义涛. 铅离子辐照注碳4H—SiC的红外光谱特性研究[J]. 原子核物理评论, 2006, 23(2): 221-223. doi: 10.11804/NuclPhysRev.23.02.221
引用本文: 周丽宏, 张崇宏, 宋银, 杨义涛. 铅离子辐照注碳4H—SiC的红外光谱特性研究[J]. 原子核物理评论, 2006, 23(2): 221-223. doi: 10.11804/NuclPhysRev.23.02.221
ZHOU Li-hong, ZHANG Chong-hong, SONG Yin, YANG Yi-tao. FTIR Characterization of C-ion Implanted and Pb-ion Irradiated 4H-SiC[J]. Nuclear Physics Review, 2006, 23(2): 221-223. doi: 10.11804/NuclPhysRev.23.02.221
Citation: ZHOU Li-hong, ZHANG Chong-hong, SONG Yin, YANG Yi-tao. FTIR Characterization of C-ion Implanted and Pb-ion Irradiated 4H-SiC[J]. Nuclear Physics Review, 2006, 23(2): 221-223. doi: 10.11804/NuclPhysRev.23.02.221

铅离子辐照注碳4H—SiC的红外光谱特性研究

doi: 10.11804/NuclPhysRev.23.02.221

FTIR Characterization of C-ion Implanted and Pb-ion Irradiated 4H-SiC

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出版历程
  • 收稿日期:  1900-01-01
  • 修回日期:  1900-01-01
  • 刊出日期:  2006-06-20

铅离子辐照注碳4H—SiC的红外光谱特性研究

doi: 10.11804/NuclPhysRev.23.02.221

摘要: 主要研究了铅离子辐照注碳4H—SiC样品在3个不同退火温度下傅立叶变换红外光谱的变化。从红外谱的变化可以知道铅辐照注碳4H-SiC样品在一定深度内出现了非晶层,波数在960—1450cm^-1范围内出现了干涉带,干涉带强度随着退火温度的升高而 变弱。1373K退火后样品的卢瑟福背散射分析结果显示,一定深度内硅原子的背散射产额明显减少。4H-SiC specimens were implanted with C-ions and then irradiated with Pb-ions, and subsequently annealed at three different temperatures. The samples were investigated by using Fourier transformation infrared spectrum(FTIR) and Rutherford backward scattering(RBS). The obtained FTIR spectra showed that there is a buried amorphous layer close to the ion-incident surface and there are several interference fringes in the range from 960 to 1 450 cm ^-1. The intensity of fringes decreases with the increase of annealing temperature. The obtained RBS spectra showed that the yield of Si atoms in 4H-SiC crystal decreases in a well-defined depth region after annealing at 1 373 K.

English Abstract

周丽宏, 张崇宏, 宋银, 杨义涛. 铅离子辐照注碳4H—SiC的红外光谱特性研究[J]. 原子核物理评论, 2006, 23(2): 221-223. doi: 10.11804/NuclPhysRev.23.02.221
引用本文: 周丽宏, 张崇宏, 宋银, 杨义涛. 铅离子辐照注碳4H—SiC的红外光谱特性研究[J]. 原子核物理评论, 2006, 23(2): 221-223. doi: 10.11804/NuclPhysRev.23.02.221
ZHOU Li-hong, ZHANG Chong-hong, SONG Yin, YANG Yi-tao. FTIR Characterization of C-ion Implanted and Pb-ion Irradiated 4H-SiC[J]. Nuclear Physics Review, 2006, 23(2): 221-223. doi: 10.11804/NuclPhysRev.23.02.221
Citation: ZHOU Li-hong, ZHANG Chong-hong, SONG Yin, YANG Yi-tao. FTIR Characterization of C-ion Implanted and Pb-ion Irradiated 4H-SiC[J]. Nuclear Physics Review, 2006, 23(2): 221-223. doi: 10.11804/NuclPhysRev.23.02.221

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