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III-V族化合物半导体材料的高能重离子辐照效应

陈志权 李世清 王柱 胡新文 王少阶 侯明东

陈志权, 李世清, 王柱, 胡新文, 王少阶, 侯明东. III-V族化合物半导体材料的高能重离子辐照效应[J]. 原子核物理评论, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161
引用本文: 陈志权, 李世清, 王柱, 胡新文, 王少阶, 侯明东. III-V族化合物半导体材料的高能重离子辐照效应[J]. 原子核物理评论, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161
Chen Zhi-quan, Li Shi-qing, Wang Zhu, Hu Xin-wen, Wang Shao-jie, Hou Ming-dong. High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors[J]. Nuclear Physics Review, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161
Citation: Chen Zhi-quan, Li Shi-qing, Wang Zhu, Hu Xin-wen, Wang Shao-jie, Hou Ming-dong. High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors[J]. Nuclear Physics Review, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161

III-V族化合物半导体材料的高能重离子辐照效应

doi: 10.11804/NuclPhysRev.15.03.161

High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors

  • 摘要: 用高能(500MeV)Ne离子束对GaAs和InP进行了辐照,用MonteCarlo模拟、正电子湮没谱学以及红外光谱研究了辐照产生的缺陷特性.结果表明,在未辐照的样品中存在单空位,经辐照后,可在样品中产生单空位;当剂量较大时,还会形成双空位甚至尺寸较大的空洞.红外光谱测量发现,在辐照后的GaAs样品中有非晶区形成.此外,辐照在样品中还产生了反位缺陷GaAs和InP以及受主杂质ZnIn.对经1014ions/cm2剂量辐照的InP进行了光学实验,在辐照后的InP材料中发现了亚稳态中心. Both GaAs and InP were irradiated by high energy (500 MeV) Ne ions. The Monte Carlo simulation, positron annihilation and IR spectroscopy were used to study the radiation induced defects. The result showed that monovacancies existed in as grown samples, but more monovacancies were introduced, after Ne ions irradiation, and with increasing radiation dose, divacancies were formed, and eventually large voids were observed. The IR measurement for irradiated GaAs samples confirmed the...
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出版历程
  • 收稿日期:  1900-01-01
  • 修回日期:  1900-01-01
  • 刊出日期:  1998-09-20

III-V族化合物半导体材料的高能重离子辐照效应

doi: 10.11804/NuclPhysRev.15.03.161

摘要: 用高能(500MeV)Ne离子束对GaAs和InP进行了辐照,用MonteCarlo模拟、正电子湮没谱学以及红外光谱研究了辐照产生的缺陷特性.结果表明,在未辐照的样品中存在单空位,经辐照后,可在样品中产生单空位;当剂量较大时,还会形成双空位甚至尺寸较大的空洞.红外光谱测量发现,在辐照后的GaAs样品中有非晶区形成.此外,辐照在样品中还产生了反位缺陷GaAs和InP以及受主杂质ZnIn.对经1014ions/cm2剂量辐照的InP进行了光学实验,在辐照后的InP材料中发现了亚稳态中心. Both GaAs and InP were irradiated by high energy (500 MeV) Ne ions. The Monte Carlo simulation, positron annihilation and IR spectroscopy were used to study the radiation induced defects. The result showed that monovacancies existed in as grown samples, but more monovacancies were introduced, after Ne ions irradiation, and with increasing radiation dose, divacancies were formed, and eventually large voids were observed. The IR measurement for irradiated GaAs samples confirmed the...

English Abstract

陈志权, 李世清, 王柱, 胡新文, 王少阶, 侯明东. III-V族化合物半导体材料的高能重离子辐照效应[J]. 原子核物理评论, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161
引用本文: 陈志权, 李世清, 王柱, 胡新文, 王少阶, 侯明东. III-V族化合物半导体材料的高能重离子辐照效应[J]. 原子核物理评论, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161
Chen Zhi-quan, Li Shi-qing, Wang Zhu, Hu Xin-wen, Wang Shao-jie, Hou Ming-dong. High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors[J]. Nuclear Physics Review, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161
Citation: Chen Zhi-quan, Li Shi-qing, Wang Zhu, Hu Xin-wen, Wang Shao-jie, Hou Ming-dong. High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors[J]. Nuclear Physics Review, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161

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